5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing

被引：14

作者：

Dong, Zhihua ^{[1
]}

Tan, Shuxin ^{[1
]}

Cai, Yong ^{[1
]}

Chen, Hongwei ^{[3
]}

Liu, Shenghou ^{[3
]}

Xu, Jicheng ^{[4
]}

Xue, Lu ^{[4
]}

Yu, Guohao ^{[1
]}

Wang, Yue ^{[1
]}

Zhao, Desheng ^{[2
]}

Hou, Keyu ^{[2
]}

Chen, Kevin J. ^{[3
]}

Zhang, Baoshun ^{[1
]}

机构：

[1] Chinese Acad Sci, Key Labatory Nanodevices & Applicat, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China

[2] Chinese Acad Sci, Nano Fabricat Facil, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China

[3] Hong Kong Univ Sci & Technol, Kowloon, Hong Kong, Peoples R China

[4] Suzhou Silikron Semicond Technol Corp Ltd, Suzhou, Peoples R China

来源：

ELECTRONICS LETTERS | 2013年 / 49卷 / 03期

关键词：

Metals - Aluminum oxide - High electron mobility transistors - Alumina - Electromagnetic pulse - Gallium nitride - Threshold voltage - Gate dielectrics - III-V semiconductors - Drain current - Oxide semiconductors - Substrates - Atomic layer deposition - MOS devices - Wide band gap semiconductors;

D O I：

10.1049/el.2012.3153

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Normally-off AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) on Si substrate were fabricated with the fluorine-based treatment technique. By employing a 20nm-thick Al2O3 gate dielectric deposited by atomic layer deposition, the fabricated MOS-HEMT exhibits a large positive threshold voltage of +3.5V, a maximum gate input voltage of 15V, a maximum saturate drain current of 5.3A and an off-state breakdown voltage of 402V. The high threshold voltage and the large input voltage swing is expected to improve the electromagnetic interference immunity and safety of AlGaN/GaN MOS-HEMT power switches.

引用

页码：221 / 222

页数：2

共 50 条

[1] Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage
Chang, C. -T.
Hsu, T. -H.
Chang, E. Y.
Chen, Y. -C.
Trinh, H. -D.
Chen, K. J.
ELECTRONICS LETTERS, 2010, 46 (18) : 1280 - U63
[2] High-threshold-voltage normally-off recessed MOS-gate AlGaN/GaN HEMT with large gate swing
Zhao Y.-B.
Zhang Y.
Cheng Z.
Huang Y.-L.
Zhang L.
Liu Z.-Q.
Yi X.-Y.
Wang G.-H.
Li J.-M.
Faguang Xuebao/Chinese Journal of Luminescence, 2016, 37 (06): : 720 - 724
[3] Normally-OFF AlGaN/GaN MOS-HEMT with a Two-Step Gate Recess
Wu, Jianzhi
Lu, Wei
Yu, Paul K. L.
PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2015, : 594 - 596
[4] A Sub-Critical Barrier Thickness Normally-Off AlGaN/GaN MOS-HEMT
Brown, Raphael
Macfarlane, Douglas
Al-Khalidi, Abdullah
Li, Xu
Ternent, Gary
Zhou, Haiping
Thayne, Iain
Wasige, Edward
IEEE ELECTRON DEVICE LETTERS, 2014, 35 (09) : 906 - 908
[5] Novel Normally-Off AlGaN/GaN-on-Si MIS-HEMT Exploiting Nanoholes Gate Structure
Pradhan, Mamta
Moser, Matthias
Alomari, Mohammed
Burghartz, Joachim. N.
Kallfass, Ingmar
ESSDERC 2022 - IEEE 52ND EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), 2022, : 400 - 403
[6] Normally-off Recessed MOS-gate AlGaN/GaN HEMTs with Over+4V Saturation Drain Current Density and a 400V Breakdown Voltage
Cheng Zhe
Zhang Yun
Zhang Lian
Zhao Yong-Bing
Wang Jun-Xi
Li Jin-Min
2016 13TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING: INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS CHINA (SSLCHINA: IFWS), 2016, : 72 - 76
[7] Normally-OFF Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V)
Freedsman, Joseph J.
Egawa, Takashi
Yamaoka, Yuya
Yano, Yoshiki
Ubukata, Akinori
Tabuchi, Toshiya
Matsumoto, Koh
APPLIED PHYSICS EXPRESS, 2014, 7 (04)
[8] Charge Injection in Normally-Off p-GaN Gate AlGaN/GaN-on-Si HFETs
Savadi, Luca
Iannaccone, Giuseppe
Sicre, Sebastien
Lavanza, Simone
Fiori, Gianluca
Haberlen, Oliver
Curatola, Gilberto
2018 48TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), 2018, : 18 - 21
[9] Normally-OFF Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with low leakage current and high breakdown voltage (825 V)
Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan
不详
不详
Appl. Phys. Express, 4
[10] 12.5 A/350 V AlGaN/GaN-on-Si MOS-HEMT with low specific on-resistance and minimal threshold hysteresis
Liu, Shuang
Yu, Guohao
Fu, Kai
Tan, Shuxin
Zhang, Zhili
Zeng, Chunhong
Hou, Keyu
Huang, Wei
Cai, Yong
Zhang, Baoshun
Yuan, Jinshe
ELECTRONICS LETTERS, 2014, 50 (18) : 1322 - 1333

← 1 2 3 4 5 →