Sensitivity of the a-Si:H/c-Si structure to alcohol vapors

被引：1
|
作者：
Sueva, D
Georgiev, SS
Iliev, L
Nedev, N
Toneva, A
机构：
[1] Univ Sofia, Fac Phys, BU-1126 Sofia, Bulgaria
[2] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria
[3] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, BU-1784 Sofia, Bulgaria
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 2002年 / 82卷 / 2-3期
关键词：
sensitivity; alcohol; vapor;
D O I：
10.1016/S0925-4005(01)01004-8
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
The change in the contact potential difference (CPD) due to ethanol vapor adsorption by a-Si:H/c-Si structure is measured by Kelvin's method. The measurements are carried out in dry nitrogen ambient and temperature in the interval 20-100 degreesC. Two types of electrically active adsorption are established-reversible and nonreversible. The reversible ethanol vapor adsorption onto the a-Si:H surface creates positively charged states at 1.1 eV above the Fermi level. The obtained results show that the a-Si:H/c-Si structure can be used for fabrication of alcohol vapor sensors such as open gate field effect transistors (FET). (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：180 / 185
页数：6
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