Low-temperature electron mobility in trigate SOI MOSFETs

被引：62

作者：

Colinge, JP ^{[1
]}

Quinn, AJ

Floyd, L

Redmond, G

Alderman, JC

Xiong, WZ

Cleavelin, CR

Schulz, T

Schruefer, K

Knoblinger, G

Patruno, P

机构：

[1] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95161 USA

[2] Tyndall Natl Inst, Cork, Ireland

[3] Texas Instruments Inc, SiTD, Dallas, TX 75265 USA

[4] Infineon Technol, D-81539 Munich, Germany

[5] Infineon Technol, D-81541 Munich, Germany

[6] Infineon Technol Austria AG, A-9500 Villfach, Austria

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 02期

基金：

爱尔兰科学基金会;

关键词：

charge carrier mobility; cryogenic electronics; MOSFETs; semiconductor device measurements; silicon-on -insulator (SOI) technology; quantum wires;

D O I：

10.1109/LED.2005.862691

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Evidence of one-dimensional subband formation is found at low temperature in trigate silicon-on-insulator MOSFETs, resulting in oscillations of the ID(VG) characteristics. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased. High mobility, reaching 1200 cm(2)/Vs, is measured in the subbands at T = 4.4 K. Subband mobility decreases as temperature is increased. Conduciion in subbands disappears for temperatures higher than 100 K or for drain voltage values that are significantly larger than kT/q.

引用

页码：120 / 122

页数：3

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