Low-temperature electron mobility in trigate SOI MOSFETs

被引：62
|
作者：
Colinge, JP [1 ]
Quinn, AJ
Floyd, L
Redmond, G
Alderman, JC
Xiong, WZ
Cleavelin, CR
Schulz, T
Schruefer, K
Knoblinger, G
Patruno, P
机构：
[1] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95161 USA
[2] Tyndall Natl Inst, Cork, Ireland
[3] Texas Instruments Inc, SiTD, Dallas, TX 75265 USA
[4] Infineon Technol, D-81539 Munich, Germany
[5] Infineon Technol, D-81541 Munich, Germany
[6] Infineon Technol Austria AG, A-9500 Villfach, Austria
来源：
IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 02期
基金：
爱尔兰科学基金会;
关键词：
charge carrier mobility; cryogenic electronics; MOSFETs; semiconductor device measurements; silicon-on -insulator (SOI) technology; quantum wires;
D O I：
10.1109/LED.2005.862691
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Evidence of one-dimensional subband formation is found at low temperature in trigate silicon-on-insulator MOSFETs, resulting in oscillations of the ID(VG) characteristics. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased. High mobility, reaching 1200 cm(2)/Vs, is measured in the subbands at T = 4.4 K. Subband mobility decreases as temperature is increased. Conduciion in subbands disappears for temperatures higher than 100 K or for drain voltage values that are significantly larger than kT/q.
引用
收藏
页码：120 / 122
页数：3
相关论文
共 50 条
  • [1] Temperature effects on trigate SOI MOSFETs
    Colinge, JP
    Floyd, L
    Quinn, AJ
    Redmond, G
    Alderman, JC
    Xiong, W
    Cleavelin, CR
    Schulz, T
    Schruefer, K
    Knoblinger, G
    Patruno, P
    IEEE ELECTRON DEVICE LETTERS, 2006, 27 (03) : 172 - 174
  • [2] Nanowire to Single-Electron Transistor Transition in Trigate SOI MOSFETs
    Akhavan, Nima Dehdashti
    Afzalian, Aryan
    Lee, Chi-Woo
    Yan, Ran
    Ferain, Isabelle
    Razavi, Pedram
    Yu, Ran
    Fagas, Giorgos
    Colinge, Jean-Pierre
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (01) : 26 - 32
  • [3] Nanowire quantum effects in trigate SOI mosfets
    Colinge, Jean-Pierre
    NANOSCALED SEMICONDUCTOR-ON-INSULATOR STRUCTURES AND DEVICES, 2007, : 129 - 142
  • [4] Subthreshold electron mobility in SOI MOSFETs and MESFETs
    Khan, T
    Vasileska, D
    Thornton, TJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (07) : 1622 - 1626
  • [5] Influence of the back-gate bias on the electron mobility of trigate MOSFETs
    Ruiz, F. G.
    Marin, E. G.
    Tienda-Luna, I. M.
    Godoy, A.
    Martinez-Blanque, C.
    Gamiz, F.
    2013 18TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2013), 2013, : 304 - 307
  • [6] Analytical modeling of potential distribution in Trigate SOI MOSFETs
    Ghanatian, Hamdam
    Hosseini, Seyed Ebrahim
    2015 23RD IRANIAN CONFERENCE ON ELECTRICAL ENGINEERING (ICEE), 2015, : 1240 - 1244
  • [7] Quantum-mechanical effects in trigate SOI MOSFETs
    Colinge, JP
    Alderman, JC
    Xiong, WZ
    Cleavelin, CR
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (05) : 1131 - 1136
  • [8] Quantum Effects on the Gate Capacitance of Trigate SOI MOSFETs
    Granzner, Ralf
    Thiele, Stefan
    Schippel, Christian
    Schwierz, Frank
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (12) : 3231 - 3238
  • [9] Simulation of Quantum Current Oscillations in Trigate SOI MOSFETs
    Akhavan, Nima Dehdashti
    Afzalian, Aryan
    Lee, Chi-Woo
    Yan, Ran
    Ferain, Isabelle
    Razavi, Pedram
    Fagas, Giorgos
    Colinge, Jean-Pierre
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (05) : 1102 - 1109
  • [10] Quantum-wire effects in trigate SOI MOSFETs
    Colinge, Jean-Pierre
    SOLID-STATE ELECTRONICS, 2007, 51 (09) : 1153 - 1160
12345