Silicon nitride gate dielectric for advanced technology

The increase in gate leakage current and boron penetration an major problems for scaled conventional gate oxide in advanced device technology, Approaches to minimize these problems will be reviewed. Jet Vapor Deposition (JVD) nitride used as a gate dielectric in an advanced CMOS process will be addressed. We have demonstrated the reduction in gate leakage current and strong resistance to boron penetration when JVD nitride is used. In;addition, JVD nitride provides a robust interface and well behaved bulk properties, MOSFET characteristics, and ring oscillator performance. The demonstration of JVD nitride as an attractive gate dielectric would provide a paradigm shift for future gate dielectric research.