Optimization of p-type contacts to InGaN-based laser diodes and light emitting diodes grown by plasma assisted molecular beam epitaxy

被引：0
|
作者：
Nowakowski-Szkudlarek, Krzesimir [1 ]
Muziol, Grzegorz [1 ]
Zak, Mikolaj [1 ]
Hajdel, Mateusz [1 ]
Siekacz, Marcin [1 ]
Feduniewicz-Zmuda, Anna [1 ]
Skierbiszewski, Czeslaw [1 ]
机构：
[1] Inst High Pressure Phys PAS, Sokolowska 29-37, PL-01142 Warsaw, Poland
来源：
OPTICA APPLICATA | 2020年 / 50卷 / 02期
关键词：
gallium nitride; molecular beam epitaxy; contacts; OHMIC CONTACT; GAN; GALLIUM;
D O I：
10.37190/oa200215
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We investigated the influence of the In0.17Ga0.83N:Mg contact layer grown by plasma assisted molecular beam epitaxy on the resistivity of p-type Ni/Au contacts. We demonstrate that the Schottky barrier width for p-type contact is less than 5 mn. We compare circular transmission line measurements with a p-n diode current-voltage characteristics and show that discrepancies between these two methods can occur if surface quality is deteriorated. It is found that the most efficient contacts to p-type material consist of In0.17Ga0.83N:Mg contact layer with Mg doping level as high as 2 x 10(20) cm(-3).
引用
收藏
页码：323 / 330
页数：8
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