Vacancy-driven shear localization in silicon nitride

被引：1

作者：

Karre, Rajamallu ^{[1
]}

Guo, Dezhou ^{[2
]}

Song, Shuangxi ^{[1
]}

Hu, Yixuan ^{[1
]}

Liu, Yu ^{[1
]}

Guo, Qiang ^{[1
]}

Liu, Pan ^{[1
]}

Wang, Xiaodong ^{[1
]}

An, Qi ^{[2
]}

Reddy, Kolan Madhav ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R China

[2] Univ Nevada, Dept Chem & Mat Engn, Reno, NV 89557 USA

来源：

SCRIPTA MATERIALIA | 2021年 / 190卷

基金：

中国国家自然科学基金;

关键词：

Silicon nitride; Vacancy; Shear deformation; Transmission electron microscopy; Quantum mechanics; POINT-DEFECTS; NANOINDENTATION; AMORPHIZATION; DISLOCATIONS; DEFORMATION; DYNAMICS; METALS;

D O I：

10.1016/j.scriptamat.2020.08.052

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Vacancies play an essential role on mechanical properties of ceramics, while it is a challenge to reveal the atomistic process of vacancy-driven failure mechanism due to difficulty in characterizing the atomic defects. Here, we used hexagonal silicon nitride as a prototype ceramic and report the shear localization as a main failure mechanism, which is characterized by combining nanoindentation and scanning transmission electron microscopy. It is revealed that the intrinsic point defects in silicon nitride triggers the nanoscale shear bands on the prismatic slip plane when subjected to high stresses. The quantum mechanics simulations ascertained that the shear bands are mediated by nitrogen defects in tetragon sites during the pure shear deformation. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：163 / 167

页数：5

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