Electrooptical properties of InP epitaxial layers grown with rare-earth admixture

被引：7
|
作者：
Zavadil, J [1 ]
Zdánsky, K [1 ]
Procházková, O [1 ]
机构：
[1] Acad Sci Czech Republ, Inst Radio Engn & Elect, CR-18251 Prague 8, Czech Republic
来源：
CZECHOSLOVAK JOURNAL OF PHYSICS | 1999年 / 49卷 / 05期
关键词：
D O I：
10.1023/A:1021285023021
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The influence of rare-earth (RE) elements (Ho, Er and Nd) addition during the LPE growth, on electrooptical properties of InP layers is reported. Temperature dependent Hall effect and capacitance-voltage curves show quite a dramatic impact of Er and Nd on shallow impurity and free-carrier concentrations: they were decreased by as much as three orders of magnitude. The background concentration of both donors and accepters decrease with increasing of RE content in the melt up to concentrations of about 0.25 wt.%. Low-temperature photoluminescence (PL) spectra have been measured for various levels of excitation power and temperature. The major manifestation of the RE admixture is the pronounced narrowing of PL curves and the corresponding appearence of fine spectral features. Temperature and excitation dependences of shallow acceptor related bands of InP:Nd layers are discussed in more detail.
引用
收藏
页码：765 / 774
页数：10
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