A novel AlGaN/GaN HEMT with a p-layer in the barrier

The potential impact of gallium-nitride (GaN) high electron mobility transistor (HEMT) with a p-layer in the barrier is reported. We investigate the device performance focusing on short channel effects, gate-drain capacitance, electric field, breakdown voltage, DC output conductance (g(o)), drain current, DC trans-conductance (g(m)) and sub-threshold slope using two-dimensional and two-carrier device simulations. Our simulation results reveal that the proposed structure reduces the short channel effects, gate-drain capacitance, sub-threshold slope and g(o) compared to the conventional and T-gate structures. Also this new structure reduces the peak electric field at the gate corner near the drain and consequently increases the breakdown voltage significantly. Increasing p-layer length (L-p) and thickness (T-p), improves the breakdown voltage, short channel effects, gate-drain capacitance and g(o). (C) 2013 Elsevier B.V. All rights reserved.