The influence of abrasive particle size in copper chemical mechanical planarization

被引：25

作者：

Wei, Kuo-Hsiu ^{[1
]}

Wang, Yu-Sheng ^{[2
]}

Liu, Chuan-Pu ^{[1
]}

Chen, Kei-Wei ^{[3
]}

Wang, Ying-Lang ^{[4
]}

Cheng, Yi-Lung ^{[5
]}

机构：

[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Natl Univ Tainan, Dept Mat Sci, Tainan, Taiwan

[4] Natl Chiao Tung Univ, Coll Photon, Tainan, Taiwan

[5] Natl Chi Nan Univ, Dept Elect Engn, Nan Tou, Taiwan

来源：

SURFACE & COATINGS TECHNOLOGY | 2013年 / 231卷

关键词：

Abrasive; Particle size distribution; PSD; Glycine; Copper; CMP; SLURRY; CMP; SURFACTANT;

D O I：

10.1016/j.surfcoat.2012.04.004

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

There are many kinds of commercial slurries used in Cu CMP. Major components include an oxidizing agent, complexing agents, inhibitors, and abrasives. We analyze the abrasive particle size by TEM and light scattering. Cu CMP polishing mechanism is also discussed under different particle size distribution. The complexing agent transportation will be the rate determining step when a small abrasive is insufficient, but the copper hydroxide removal rate will determine the overall polishing rate when the amount of smaller particles is enough. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：543 / 545

页数：3

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