Reverse leakage current characteristics of InGaN/GaN multiple quantum well ultraviolet/blue/green light-emitting diodes

被引：24
|
作者：
Zhou, Shengjun [1 ]
Lv, Jiajiang [2 ]
Wu, Yini [1 ]
Zhang, Yuan [1 ]
Zheng, Chenju [1 ]
Liu, Sheng [1 ]
机构：
[1] Wuhan Univ, Sch Power & Mech Engn, Wuhan 430072, Hubei, Peoples R China
[2] Jiujiang Vocat & Tech Coll, Jiujiang 332007, Peoples R China
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2018年 / 57卷 / 05期
基金：
中国国家自然科学基金;
关键词：
MOLECULAR-BEAM EPITAXY; HOPPING CONDUCTION; BIAS LEAKAGE; GAN;
D O I：
10.7567/JJAP.57.051003
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the reverse leakage current characteristics of InGaN/GaN multiple quantum well (MOW) near-ultraviolet (NUV)/blue/green light-emitting diodes (LEDs). Experimental results showed that the NUV LED has the smallest reverse leakage current whereas the green LED has the largest. The reason is that the number of defects increases with increasing nominal indium content in InGaN/GaN MC/Ws. The mechanism of the reverse leakage current was analyzed by temperature-dependent current-voltage measurement and capacitance-voltage measurement. The reverse leakage currents of NUV/blue/green LEDs show similar conduction mechanisms: at low temperatures, the reverse leakage current of these LEDs is attributed to variable-range hopping (VRH) conduction; at high temperatures, the reverse leakage current of these LEDs is attributed to nearest-neighbor hopping (NNH) conduction, which is enhanced by the Poole-Frenkel effect. (C) 2018 The Japan Society of Applied Physics
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页数：5
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