Gain spectroscopy of HVPE-grown GaN

被引：0
|
作者：
Eckey, L
Holst, JC
Hoffmann, A
Broser, I
Detchprohm, T
Hiramatsu, K
机构：
[1] TECH UNIV BERLIN, INST FESTKORPERPHYS, D-1000 BERLIN, GERMANY
[2] NAGOYA UNIV, SCH ENGN, DEPT ELECT, NAGOYA, AICHI, JAPAN
来源：
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH | 1997年 / 2卷 / 1-5期
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on photoluminescence and optical gain measurements of highly excited GaN crystals grown by hydride vapor physe epitaxy (HVPE). Inelastic scattering processes of excitons dominate the spontaneous emission spectrum under high excitation up to temperatures of 180 K. Towards room temperature phonon-assisted recombination of excitons and free carriers begins to dominate the spectrum. Similar characteristics are observed in temperature-dependent gain measurements.
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页码：art. no. / 1
页数：6
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