High-power semiconductor lasers with surface diffraction grating (1050nm)

被引：0

作者：

Slipchenko, Sergey O. ^{[1
]}

Zolotarev, Vasily V. ^{[1
]}

Leshko, Andrei Yu. ^{[1
]}

Podoskin, Aleksandr A. ^{[1
]}

Shamakhov, Viktor V. ^{[1
]}

Kapitonov, Vladimir A. ^{[1
]}

Kop'ev, Peter S. ^{[1
]}

Pikhtin, Nikita A. ^{[1
]}

机构：

[1] Ioffe Inst, 26 Politekhnicheskaya, St Petersburg 194021, Russia

来源：

NOVEL IN-PLANE SEMICONDUCTOR LASERS XIX | 2020年 / 11301卷

基金：

俄罗斯科学基金会;

关键词：

semiconductor lasers; distributed Bragg reflector; single mode; laser spectrum;

D O I：

10.1117/12.2546174

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Studies of multimode and single-mode semiconductor lasers with a surface distributed Bragg reflector (S-DBR) were carried out. S-DBR with a period of 2 mu m was formed in the upper cladding layer by contact photolithography. The spectrum width for all laser designs did not exceed 0.3 nm both at continuous wave (CW) and pulse of 100 ns pump. Temperature stability of emission wavelength increase from a value of 0.35 nm/degrees C for a Fabry-Perot laser to a value of 0.075 nm/degrees C for a S-DBR laser was demonstrated. The relatively low output optical power of high-order S-DBR lasers is associated with the presence of diffraction modes emitting from the surface of the DBR.

引用

页数：8

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