Modulation of Fano resonances by an external magnetic field in semiconductor quantum wells

被引：4

作者：

Bellani, V ^{[1
]}

Perez, E ^{[1
]}

Zimmermann, S ^{[1
]}

Vina, L ^{[1
]}

Hey, R ^{[1
]}

Ploog, K ^{[1
]}

机构：

[1] PAUL DRUDE INST FESTKORPERELEKTR,D-10117 BERLIN,GERMANY

来源：

SOLID-STATE ELECTRONICS | 1996年 / 40卷 / 1-8期

关键词：

D O I：

10.1016/0038-1101(95)00218-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the dimensionality dependence of the behavior of Fano resonances in the photoluminescence excitation spectra of GaAs-AlxGa1-xAs heterostructures in a magnetic field applied in the Faraday configuration. A striking difference is observed between quasi-two and quasi-three-dimensional systems: while the Fano profiles evolve into Lorentzian lineshapes in two-dimensional systems, Fano resonances emerge from the continuum in three-dimensional-systems with increasing magnetic field.

引用

页码：85 / 88

页数：4

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