Modulation of Fano resonances by an external magnetic field in semiconductor quantum wells

被引：4
|
作者：
Bellani, V [1 ]
Perez, E [1 ]
Zimmermann, S [1 ]
Vina, L [1 ]
Hey, R [1 ]
Ploog, K [1 ]
机构：
[1] PAUL DRUDE INST FESTKORPERELEKTR,D-10117 BERLIN,GERMANY
来源：
SOLID-STATE ELECTRONICS | 1996年 / 40卷 / 1-8期
关键词：
D O I：
10.1016/0038-1101(95)00218-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have studied the dimensionality dependence of the behavior of Fano resonances in the photoluminescence excitation spectra of GaAs-AlxGa1-xAs heterostructures in a magnetic field applied in the Faraday configuration. A striking difference is observed between quasi-two and quasi-three-dimensional systems: while the Fano profiles evolve into Lorentzian lineshapes in two-dimensional systems, Fano resonances emerge from the continuum in three-dimensional-systems with increasing magnetic field.
引用
收藏
页码：85 / 88
页数：4
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