Thermal Study of the High-Frequency Noise in GaN HEMTs

被引：43
|
作者：
Thorsell, Mattias [1 ]
Andersson, Kristoffer [1 ]
Fagerlind, Martin
Sudow, Mattias
Nilsson, Per-Ake
Rorsman, Niklas
机构：
[1] Chalmers Univ Technol, Microwave Elect Lab, GigaHertz Ctr, SE-41296 Gothenburg, Sweden
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2009年 / 57卷 / 01期
关键词：
Gallium nitride (GaN); modeling; noise; temperature measurement; thermal resistance; ALGAN/GAN HEMTS; CHANNEL TEMPERATURE; HFETS;
D O I：
10.1109/TMTT.2008.2009084
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The high-frequency noise performance of the GaN HEMT is studied for temperatures between 297-398 K. The access resistances R-S and R-D have a limiting effect on the noise performance, and in this paper, their temperature dependence is studied in detail for a 2 x 100 mu m GaN HEMT. R-S and R-D show an increase of 0.71 and 0.86 %/K, respectively. The self-heating effect due to dissipated power is also studied to allow accurate intrinsic small-signal and noise parameter extraction. The thermal resistance is measured by infrared microscopy. Based on these results, a temperature dependent noise model including self-heating and temperature-dependent access resistances is derived and verified with measurements.
引用
收藏
页码：19 / 26
页数：8
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