A 34-42GHz Single-Side-Band Transmitter with Switchable VCO/PLL in 90nm-CMOS Process

被引：0

作者：

Huang, Ching-Ying ^{[1
]}

Wu, Kun-Long ^{[1
]}

Hu, Robert ^{[2
]}

Chang, Chi-Yang ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Commun Engn, Hsinchu, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

来源：

2017 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT) | 2017年

关键词：

Q-band; CMOS; transmitter; PLL; millimeter-wave;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This manuscript describes a 34-42GHz single-sideband 90nm-CMOS transmitter where PLL has been integrated into the LO chain and, with I/Q input and two-stage up-conversion, a 30dB image-rejection ratio is achieved within the intended bandwidth. This transmitter's wideband tuning range is made possible by the use of additional capacitor on the VCO, and the phase noise of the resulting RF output is in the range of -70 to -90dBc/Hz at 1MHz, and all below 100dBc/Hz at 10MHz. The circuit's IF-to-RF conversion gain is 30dB, with saturated output power around 5dBm, and the total power consumption is 260mW. Through the control of the power amplifier's drain bias, a 50dB power level difference can be obtained, thus allows signal modulation and further combination with the receiver. This 1100x650um(2) transmitter can be used as a prototypical circuit to explore next-generation mobile communication and civilian radar array systems.

引用

页码：46 / 49

页数：4