Structural properties of ultrathin InGaN/GaN quantum wells

被引：1

作者：

Sahonta, S. -L. ^{[1
]}

Komninou, Ph. ^{[1
]}

Dimitrakopulos, G. P. ^{[1
]}

Salcianu, C. ^{[2
]}

Thrush, E. J. ^{[2
]}

Karakostas, Th. ^{[1
]}

机构：

[1] Aristotle Univ Thessaloniki, Dept Phys, Thessaloniki 54124, Greece

[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2008年 / 205卷 / 11期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1002/pssa.200780168

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A high indium-content blue light-emitting diode (LED) structure grown on silicon (111), consisting of five very thin MOCVD-grown In0.2Ga0.8N quantum wells (QWs), is shown by high resolution transmission electron microscopy (HRTEM) to contain structural defects in the active region. HRTEM imaging reveals QWs containing stacking faults and also gaps ranging between 5 nm and 50 nm in length which isolate separate regions of QW of similar dimensions to the gaps. The relatively high internal quantum efficiency of the structure is attributed to enhanced confinement of carriers via the ultrathin QWs, the strained sections of QW between the gaps, and by the sections of QW with sphalerite crystal structure, identified by characteristic stacking fault phase contrast in HRTEM images. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2556 / 2559

页数：4

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