Fabrication and low-temperature photoluminescence spectra of Mn-doped ZnO nanowires

被引：1
|
作者：
Zhang, Jun [1 ]
Jiang, Feihong [1 ]
Ding, Shuanghong [1 ]
机构：
[1] Yantai Univ, Inst Optoelect Informat Sci Tech, Key Lab Optoelect Informat Techn Shandong, Yantai 264005, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2012年 / 109卷 / 02期
基金：
中国国家自然科学基金;
关键词：
MAGNETIC-PROPERTIES; THIN-FILMS; NANOPIEZOTRONICS; SEMICONDUCTORS; FERROMAGNETISM; GROWTH;
D O I：
10.1007/s00339-012-7294-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Mn-doped ZnO nanowires have been fabricated through a high temperature vapor-solid deposition process. The low-temperature photoluminescence spectra of the samples show that there are multipeak emissions at the ultraviolet (UV) region (about 3.4-3.0 eV). The excitonic and phonon-assisted transitions in Mn-doped ZnO nanowires were investigated. The results show that there is an obvious oscillatory structure emission at the UV region under low temperature from 12-125 K. The oscillatory structure has an energy periodicity about 70 meV and the oscillatory structure is mainly attributed to longitudinal optical (LO) phonon replicas of free excitons (FX). The multipeak emissions at 12 K are attributed to a donor-bound exciton (DBX, 3.3617 eV), 1LO-phonon replicas of a free exciton (FX-1LO, 3.3105 eV), 2LO-phonon replicas of a free exciton (FX-2LO, 3.2396 eV), and 3LO-phonon replicas of a free exciton (FX-3LO, 3.1692 eV), respectively. The intensity of UV emission and the efficiency of emission from the Mn-doped ZnO nanowires are improved.
引用
收藏
页码：255 / 259
页数：5
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