This work focus on the effects of C vacancy on wetting of Fe to TiC/Fe at the cermet interfaces. We do the whole work using the first-principles density functional theories. The ideal work of adhesion of the pure interface is not big enough, comparing with the expeimental value. Our calculations suggest that the C vacancy at the interface is a very important factor for interface banding of TiC/Fe cermet composite. An adequate quantities of C vacancies at the interface can improve the wetting of TiC/Fe interfaces.
机构:
Shenyang Normal Univ, Coll Phys Sci & Technol, Shenyang 110034, Peoples R ChinaShenyang Normal Univ, Coll Phys Sci & Technol, Shenyang 110034, Peoples R China
Tang Jie
Zhang Guo-Ying
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Shenyang Normal Univ, Coll Phys Sci & Technol, Shenyang 110034, Peoples R ChinaShenyang Normal Univ, Coll Phys Sci & Technol, Shenyang 110034, Peoples R China
Zhang Guo-Ying
Bao Jun-Shan
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Shenyang Siasun Robot & Automat Co Ltd, Shenyang 110168, Peoples R ChinaShenyang Normal Univ, Coll Phys Sci & Technol, Shenyang 110034, Peoples R China
Bao Jun-Shan
Liu Gui-Li
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Shenyang Univ Technol, Coll Construct Engn, Shenyang 110023, Peoples R ChinaShenyang Normal Univ, Coll Phys Sci & Technol, Shenyang 110034, Peoples R China
Liu Gui-Li
Liu Chun-Ming
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Northeastern Univ, Sch Met & Mat, Shenyang 110819, Peoples R ChinaShenyang Normal Univ, Coll Phys Sci & Technol, Shenyang 110034, Peoples R China
机构:
Univ York, Dept Phys, York YO10 5DD, N Yorkshire, England
Univ Sheffield, Dept Comp Sci, Sheffield S1 4DP, S Yorkshire, EnglandUniv York, Dept Phys, York YO10 5DD, N Yorkshire, England
Bose, Thomas
Cuadrado, Ramon
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Univ York, Dept Phys, York YO10 5DD, N Yorkshire, England
Inst Catala Nanociencia & Nanotecnol, Campus UAB,Edifici ICN2, Barcelona 08193, SpainUniv York, Dept Phys, York YO10 5DD, N Yorkshire, England
Cuadrado, Ramon
Evans, Richard F. L.
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Univ York, Dept Phys, York YO10 5DD, N Yorkshire, EnglandUniv York, Dept Phys, York YO10 5DD, N Yorkshire, England
Evans, Richard F. L.
Chepulskii, Roman V.
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Samsung Elect, Semicond R&D Ctr Grandis, San Jose, CA 95134 USAUniv York, Dept Phys, York YO10 5DD, N Yorkshire, England
Chepulskii, Roman V.
Apalkov, Dmytro
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Samsung Elect, Semicond R&D Ctr Grandis, San Jose, CA 95134 USAUniv York, Dept Phys, York YO10 5DD, N Yorkshire, England
Apalkov, Dmytro
Chantrell, Roy W.
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Univ York, Dept Phys, York YO10 5DD, N Yorkshire, EnglandUniv York, Dept Phys, York YO10 5DD, N Yorkshire, England