Specific features of sublimation growth of bulk AlN crystals on SiC wafers

被引：17
|
作者：
Mokhov, E. [1 ]
Izmaylova, I. [1 ]
Kazarova, O. [1 ]
Wolfson, A. [1 ]
Nagalyuk, S. [1 ,3 ]
Litvin, D. [1 ,3 ]
Vasiliev, A. [3 ]
Helava, H. [2 ]
Makarov, Yu [2 ,3 ]
机构：
[1] AF Ioffe Phys Tech Inst, Polytekhnicheskaya 26, St Petersburg 194021, Russia
[2] Nitride Crystals Inc, Deer Pk, NY 11729 USA
[3] Nitride Crystals Ltd, St Petersburg 194156, Russia
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3 | 2013年 / 10卷 / 03期
关键词：
aluminum nitride; single crystal growth; sublimation sandwich method; ELECTRONIC APPLICATIONS; PVT GROWTH; OXYGEN;
D O I：
10.1002/pssc.201200638
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The features of 2" AlN bulk crystal growth by the sublimation sandwich method (SSM) on SiC seeds in a graphite-heated reactor are investigated. AlN growth conditions and crystal properties are compared with the results of SiC sublimation growth in the same reactor. The specifics of AlN sublimation growth, including insufficient reproducibility of results, are believed to be caused by the low sticking coefficient of molecular nitrogen and the high reactivity of Al vapors. The formation of pores in the AlN crystal is explained by selective sublimation etching of the growing surface. The negative effect of non-optimal growth conditions and impurities on AlN crystal quality is discussed. The analysis of container materials, inert to Al vapors was carried out. Various types of TaC crucibles suitable for growth of bulk AlN crystals on SiC seeds were developed.. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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收藏
页码：445 / 448
页数：4
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