High Efficiency Large Area a-Si:H and a-SiGe:H Multi-junction Solar Cells Using MVHF at High Deposition Rate

被引：0

作者：

Xu, Xixiang ^{[1
]}

Beglau, Dave ^{[1
]}

Ehlert, Scott ^{[1
]}

Li, Yang ^{[1
]}

Su, Tining ^{[1
]}

Yue, Guozhen ^{[1
]}

Yan, Baojie ^{[1
]}

Lord, Ken ^{[1
]}

Banerjee, Arindam ^{[1
]}

Yang, Jeff ^{[1
]}

Guha, Subhendu ^{[1
]}

Hugger, Peter G. ^{[2
]}

Cohen, J. David ^{[2
]}

机构：

[1] United Solar Ovon LLC, 1100 W Maple Rd, Troy, MI 48084 USA

[2] Univ Oregon, Dept Phys, Eugene, OR 97403 USA

来源：

AMORPHOUS AND POLYCRYSTALLINE THIN FILM SILICON SCIENCE AND TECHNOLOGY - 2009, VOL 1153 | 2009年 / 1153卷

关键词：

D O I：

10.1557/PROC-1153-A07-01

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have developed high efficiency large area a-Si: H and a-SiGe: H multi-junction solar cells using a Modified Very High Frequency (MVHF) glow discharge process. We conducted a comparative study for different cell structures, and compared the initial and stable performance and light-induced degradation of solar cells made using MVHF and RF techniques. Besides high efficiency, the MVHF cells also demonstrate superior light stability, showing <10% degradation after 1000 hour of one-sun light soaking at 50 degrees C. We also studied light-induced defect level and hydrogen evolution characteristics of MVHF deposited a-SiGe: H films and compared them with the RF deposited films.

引用

页数：6

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