High Efficiency Large Area a-Si:H and a-SiGe:H Multi-junction Solar Cells Using MVHF at High Deposition Rate

被引：0
|
作者：
Xu, Xixiang [1 ]
Beglau, Dave [1 ]
Ehlert, Scott [1 ]
Li, Yang [1 ]
Su, Tining [1 ]
Yue, Guozhen [1 ]
Yan, Baojie [1 ]
Lord, Ken [1 ]
Banerjee, Arindam [1 ]
Yang, Jeff [1 ]
Guha, Subhendu [1 ]
Hugger, Peter G. [2 ]
Cohen, J. David [2 ]
机构：
[1] United Solar Ovon LLC, 1100 W Maple Rd, Troy, MI 48084 USA
[2] Univ Oregon, Dept Phys, Eugene, OR 97403 USA
来源：
AMORPHOUS AND POLYCRYSTALLINE THIN FILM SILICON SCIENCE AND TECHNOLOGY - 2009, VOL 1153 | 2009年 / 1153卷
关键词：
D O I：
10.1557/PROC-1153-A07-01
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have developed high efficiency large area a-Si: H and a-SiGe: H multi-junction solar cells using a Modified Very High Frequency (MVHF) glow discharge process. We conducted a comparative study for different cell structures, and compared the initial and stable performance and light-induced degradation of solar cells made using MVHF and RF techniques. Besides high efficiency, the MVHF cells also demonstrate superior light stability, showing <10% degradation after 1000 hour of one-sun light soaking at 50 degrees C. We also studied light-induced defect level and hydrogen evolution characteristics of MVHF deposited a-SiGe: H films and compared them with the RF deposited films.
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页数：6
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