Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device

被引：70
|
作者：
Xie, Hongwei [1 ,2 ]
Liu, Qi [2 ]
Li, Yingtao [1 ,2 ]
Lv, Hangbing [2 ]
Wang, Ming [2 ]
Liu, Xiaoyu [2 ]
Sun, Haitao [2 ]
Yang, Xiaoyi [2 ]
Long, Shibing [2 ]
Liu, Su [1 ]
Liu, Ming [2 ]
机构：
[1] Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
[2] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2012年 / 27卷 / 12期
关键词：
PARAMETER VARIATION; GATE DIELECTRICS; LAYER; HFO2; ELECTRODE; ZRO2;
D O I：
10.1088/0268-1242/27/12/125008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of nitrogen doping by the NH3 plasma treatment approach on the resistive switching properties of a HfO2-based resistive random access memory (RRAM) device is investigated. Test results demonstrate that significantly improved performances are achieved in the HfO2-based RRAM device by nitrogen doping, including low operating voltages, improved uniformity of switching parameters, satisfactory endurance and long retention characteristics. Doping by nitrogen is proposed to suppress the stochastic formation of conducting filaments in the HfO2 matrix and thus improve the performances of the Pt/Ti/HfO2/Pt device.
引用
收藏
页数：5
相关论文
共 50 条
  • [41] Resistive switching characteristics of HfO2 based bipolar nonvolatile RRAM cell
    Lata, Lalit Kumar
    Jain, Praveen K.
    Chand, Umesh
    Bhatia, Deepak
    Shariq, Mohammad
    MATERIALS TODAY-PROCEEDINGS, 2020, 30 : 217 - 220
  • [42] Optimized Method for Low-Energy and Highly Reliable Multibit Operation in a HfO2-Based Resistive Switching Device
    Ryu, Jin Joo
    Park, Bo Keun
    Chung, Taek-Mo
    Lee, Young Kuk
    Kim, Gun Hwan
    ADVANCED ELECTRONIC MATERIALS, 2018, 4 (12):
  • [43] Formation and Characterization of Filamentary Current Paths in HfO2-Based Resistive Switching Structures
    Palumbo, F.
    Miranda, E.
    Ghibaudo, G.
    Jousseaume, V.
    IEEE ELECTRON DEVICE LETTERS, 2012, 33 (07) : 1057 - 1059
  • [44] HfO2-Based RRAM with In Situ Conductive Channels Induced by Nanoparticles to Improve Stability
    Pan, Jinyan
    He, Hongyang
    Dan, Yaping
    Lin, Yuxiang
    Yang, Shuya
    Li, Maojing
    Li, Tiejun
    ACS APPLIED ELECTRONIC MATERIALS, 2023, 6 (01) : 406 - 414
  • [45] Resistive switching modulation by incorporating thermally enhanced layer in HfO2-based memristor
    Li, Xing
    Feng, Zhe
    Zou, Jianxun
    Wu, Zuheng
    Xu, Zuyu
    Yang, Fei
    Zhu, Yunlai
    Dai, Yuehua
    NANOTECHNOLOGY, 2024, 35 (03)
  • [46] Switching Behavior of HfO2-based Resistive RAM with Vertical CNT Bottom Electrode
    Avasarala, Naga Sruti
    Heyns, Marc
    Van Houdt, Jan
    van der Veen, Marleen H.
    Wouters, Dirk J.
    Jurczak, Malgorzata
    2017 IEEE 9TH INTERNATIONAL MEMORY WORKSHOP (IMW), 2017, : 72 - 75
  • [47] A thorough investigation of the progressive reset dynamics in HfO2-based resistive switching structures
    Lorenzi, P.
    Rao, R.
    Irrera, F.
    Sune, J.
    Miranda, E.
    APPLIED PHYSICS LETTERS, 2015, 107 (11)
  • [48] Effect of crystallization on the reliability of unipolar resistive-switching in HfO2-based dielectrics
    Saleh, M. N.
    Venkatachalam, D. K.
    Elliman, R. G.
    CURRENT APPLIED PHYSICS, 2014, 14 : S88 - S92
  • [49] HfO2-based resistive switching memory with CNTs electrode for high density storage
    Cheng, W. K.
    Wang, F.
    Han, Y. M.
    Zhang, Z. C.
    Zhao, J. S.
    Zhang, K. L.
    SOLID-STATE ELECTRONICS, 2017, 132 : 19 - 23
  • [50] Sensitivity of HfO2-based RRAM Cells to Laser Irradiation
    Petryk, Dmytro
    Dyka, Zoya
    Perez, Eduardo
    Kabin, Ievgen
    Katzer, Jens
    Schaeffner, Jan
    Langendoerfer, Peter
    MICROPROCESSORS AND MICROSYSTEMS, 2021, 87
12345