Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device

被引：70

作者：

Xie, Hongwei ^{[1
,2
]}

Liu, Qi ^{[2
]}

Li, Yingtao ^{[1
,2
]}

Lv, Hangbing ^{[2
]}

Wang, Ming ^{[2
]}

Liu, Xiaoyu ^{[2
]}

Sun, Haitao ^{[2
]}

Yang, Xiaoyi ^{[2
]}

Long, Shibing ^{[2
]}

Liu, Su ^{[1
]}

Liu, Ming ^{[2
]}

机构：

[1] Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China

[2] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2012年 / 27卷 / 12期

关键词：

PARAMETER VARIATION; GATE DIELECTRICS; LAYER; HFO2; ELECTRODE; ZRO2;

D O I：

10.1088/0268-1242/27/12/125008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of nitrogen doping by the NH3 plasma treatment approach on the resistive switching properties of a HfO2-based resistive random access memory (RRAM) device is investigated. Test results demonstrate that significantly improved performances are achieved in the HfO2-based RRAM device by nitrogen doping, including low operating voltages, improved uniformity of switching parameters, satisfactory endurance and long retention characteristics. Doping by nitrogen is proposed to suppress the stochastic formation of conducting filaments in the HfO2 matrix and thus improve the performances of the Pt/Ti/HfO2/Pt device.

引用

页数：5

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