High field emission efficiency surface conduction electron emitters

被引：7
|
作者：
Li, Yiming [1 ]
Chao, Hsueh-Yung [1 ]
Lo, Hsiang-Yu [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Commun Engn, Hsinchu 300, Taiwan
来源：
JOURNAL OF COMPUTATIONAL ELECTRONICS | 2008年 / 7卷 / 03期
关键词：
Surface conduction electron-emitter; Hydrogen embrittlement; Focused ion beam; Finite-difference time-domain particle-in-cell method; Current-voltage characteristic; Electric fields; Electron trajectories;
D O I：
10.1007/s10825-007-0168-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Two different surface conduction electron-emitter (SCE) structures with the nanogap of 90 nm wide fabricated by hydrogen embrittlement (HE) and focused ion beam techniques are simulated for the first time. We employ a three-dimensional particle-in-cell method coupling with finite-difference time-domain scheme to simulate the property of electron emission in these SCEs. Our calibrated simulation predicts high emission efficiency of the SCE structure which is fabricated by HE. Compared with the other SCE structure, it is observed that the proposed structure possesses low power consumption at the fixed emission current when the width of nanogap becomes narrower. The current-voltage characteristics including conducting mechanisms are investigated and explained.
引用
收藏
页码：440 / 444
页数：5
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