0.1-mu m InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVD

被引：0
|
作者：
Enoki, T
Ito, H
Ikuta, K
Umeda, Y
Ishii, Y
机构：
[1] NTT LSI Laboratories, Atsugi-Shi, Kanagawa Pref., 243-01
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1996年 / 11卷 / 03期
关键词：
InGaAs; HEMT; recess-etch stopper; threshold voltage; ring oscillator;
D O I：
10.1002/(SICI)1098-2760(19960220)11:3<135::AID-MOP7>3.0.CO;2-M
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-performance InAlAs / InGaAs HEMTs with a highly uniform threshold voltage are fabricated using an InP-recess-etch stopper. Recess-depth control is improved and design of the device characteristics is made easier. An SCFL ring oscillator with a propagation delay time of 6.6 ps / gate is achieved with these HEMTs. (C) 1996 John Wiley & Sons, Inc.
引用
收藏
页码：135 / 139
页数：5
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