Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition

被引:20
|
作者
Edy, Riyanto [1 ,2 ]
Huang, Xiaojiang [1 ]
Guo, Ying [1 ]
Zhang, Jing [1 ,2 ]
Shi, Jianjun [1 ,2 ]
机构
[1] Donghua Univ, Coll Sci, Shanghai 201620, Peoples R China
[2] Donghua Univ, Coll Mat Sci & Engn, State Key Lab Modificat Chem Fibers & Polymer Mat, Shanghai 201620, Peoples R China
来源
关键词
Atomic layer deposition; PET film; Al2O3; coating; POLYMER; ALUMINUM; LASER;
D O I
10.1186/1556-276X-8-79
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this paper, polyethyleneterephthalate (PET) films with and without plasma pretreatment were modified by atomic layer deposition (ALD) and plasma-assisted atomic layer deposition (PA-ALD). It demonstrates that the Al2O3 films are successfully deposited onto the surface of PET films. The cracks formed on the deposited Al2O3 films in the ALD, plasma pretreated ALD, and PA-ALD were attributed to the energetic ion bombardment in plasmas. The surface wettability in terms of water contact angle shows that the deposited Al2O3 layer can enhance the wetting property of modified PET surface. Further characterizations of the Al2O3 films suggest that the elevated density of hydroxyl -OH group improve the initial growth of ALD deposition. Chemical composition of the Al2O3-coated PET film was characterized by X-ray photoelectron spectroscopy, which shows that the content of C 1s reduces with the growing of O 1s in the Al2O3-coated PET films, and the introduction of plasma in the ALD process helps the normal growth of Al2O3 on PET in PA-ALD.
引用
收藏
页数:9
相关论文
共 50 条
  • [21] PLASMA-ENHANCED ATOMIC LAYER DEPOSITION OF Al2O3 THIN FILM ON TIO2 NANOTUBES
    Goncalves, Rachel C.
    Doria, Anelise C. O. C.
    Lima, Jhonatan. S. B.
    Pessoa, Rodrigo S.
    Maciel, Homero S.
    2017 IEEE INTERNATIONAL CONFERENCE ON PLASMA SCIENCE (ICOPS), 2017,
  • [22] Atomic layer deposition of Al2O3 and TiO2 on MoS2 surfaces
    Kropp, Jaron A.
    Cai, Yuhang
    Yao, Zihan
    Zhu, Wenjuan
    Gougousi, Theodosia
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2018, 36 (06):
  • [23] Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
    Li, Xingcun
    Lei, Wenwen
    Zhao, Qiao
    Chen, Qiang
    SURFACE & COATINGS TECHNOLOGY, 2013, 228 : S55 - S60
  • [24] Preparation of Pd-based thin film LaFeO3 by atomic layer deposition onto Al2O3 support
    Onn, Tzia Ming
    Gorte, Raymond
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2016, 252
  • [25] Study of Pt growth on Si, Al2O3, Au, and Ni surfaces by plasma enhanced atomic layer deposition
    Yan, Mingming
    Zhang, Tianchong
    Wang, Bo
    Liu, Jing
    Liang, Xiaoxiao
    Xu, Yuanze
    Yi, Futing
    JOURNAL OF APPLIED PHYSICS, 2021, 130 (10)
  • [26] Molecular dynamics simulation of the Al2O3 film structure during atomic layer deposition
    Hu, Zheng
    Shi, Junxia
    Heath Turner, C.
    MOLECULAR SIMULATION, 2009, 35 (04) : 270 - 279
  • [27] Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors
    Peng Zhang
    Zhen-Hua Ye
    Chang-Hong Sun
    Yi-Yu Chen
    Tian-Ning Zhang
    Xin Chen
    Chun Lin
    Ring-Jun Ding
    Li He
    Journal of Electronic Materials, 2016, 45 : 4716 - 4720
  • [28] Formation mechanism and photoelectric properties of Al2O3 film based on atomic layer deposition
    Wei, Bin
    Chen, Huimin
    Hua, Wenqiang
    Chen, Minyu
    Ding, Xingwei
    Li, Chunya
    APPLIED SURFACE SCIENCE, 2022, 572
  • [29] Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors
    Zhang, Peng
    Ye, Zhen-Hua
    Sun, Chang-Hong
    Chen, Yi-Yu
    Zhang, Tian-Ning
    Chen, Xin
    Lin, Chun
    Ding, Ring-Jun
    He, Li
    JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (09) : 4716 - 4720
  • [30] Realization of Thin Film Encapsulation by Atomic Layer Deposition of Al2O3 at Low Temperature
    Yang, Yong-Qiang
    Duan, Yu
    Chen, Ping
    Sun, Feng-Bo
    Duan, Ya-Hui
    Wang, Xiao
    Yang, Dan
    JOURNAL OF PHYSICAL CHEMISTRY C, 2013, 117 (39): : 20308 - 20312