Effects of annealing on the spectral response and dark current of quantum dot infrared photodetectors

被引：6
|
作者：
Jolley, G. [1 ]
Fu, L. [1 ]
Tan, H. H. [1 ]
Jagadish, C. [1 ]
机构：
[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2008年 / 41卷 / 21期
关键词：
D O I：
10.1088/0022-3727/41/21/215101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on a detailed analysis of the dark currents of a quantum dot infrared photodetector annealed at various temperatures from 700 to 850 degrees C. Annealing induced intermixing of the quantum dot and barrier material and therefore a reduction of the quantum dot confining potential, which caused a shift in the spectral response from 7 to 9.3 mu m for an 850 degrees C anneal. An analysis of the dark currents reveals that the dark current mechanisms are similar for the annealed and as- grown devices, indicating that annealing up to 850 degrees C may not have an adverse effect on the semiconductor material quality.
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页数：7
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