Effects of annealing on the spectral response and dark current of quantum dot infrared photodetectors

被引：6

作者：

Jolley, G. ^{[1
]}

Fu, L. ^{[1
]}

Tan, H. H. ^{[1
]}

Jagadish, C. ^{[1
]}

机构：

[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2008年 / 41卷 / 21期

关键词：

D O I：

10.1088/0022-3727/41/21/215101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a detailed analysis of the dark currents of a quantum dot infrared photodetector annealed at various temperatures from 700 to 850 degrees C. Annealing induced intermixing of the quantum dot and barrier material and therefore a reduction of the quantum dot confining potential, which caused a shift in the spectral response from 7 to 9.3 mu m for an 850 degrees C anneal. An analysis of the dark currents reveals that the dark current mechanisms are similar for the annealed and as- grown devices, indicating that annealing up to 850 degrees C may not have an adverse effect on the semiconductor material quality.

引用

页数：7

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