Optical probing of a silicon integrated circuit using electric-field-induced second-harmonic generation

被引：11
|
作者：
Xiao, D [1 ]
Ramsay, E
Reid, DT
Offenbeck, B
Weber, N
机构：
[1] Heriot Watt Univ, Ultrafast Opt Grp, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland
[2] Fraunhofer Inst Integrierte Schaltungen, D-90411 Nurnberg, Germany
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 11期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1063/1.2180446
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
By using the electric-field-induced second-harmonic generation effect, we have detected electrical signals present on a complementary metal-oxide-semiconductor (CMOS) integrated circuit in a noncontact geometry. Femtosecond pulses with a wavelength of 2.16 mu m were incident on the device and the second harmonic at 1.08 mu m exhibited a field-dependent behavior. The conversion efficiency from the fundamental to the second harmonic was estimated to be -103 dB. (c) 2006 American Institute of Physics.
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页数：3
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