New type of thermal-isolation structure based on PI and OPS used in uncooled infrared detector

被引：1
|
作者：
Liu, Xing-Ming [1 ]
Han, Lin [1 ]
Liu, Li-Tian [1 ]
机构：
[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源：
IEEE SENSORS JOURNAL | 2008年 / 8卷 / 3-4期
关键词：
oxidized porous silicon (POS); polyimide; thermal-isolation structure; uncooled infrared (IR) detector;
D O I：
10.1109/JSEN.2008.917475
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new type of thermal-isolation structure based on polyimide (PI) and oxidized porous silicon (OPS) is presented. The structure has the advantage of simpler process, lower cost, and higher yield. The mechanism is described briefly in this paper and the process is studied in detail. The thermal-isolation capability of the structure is verified by a-Si bolometer with PI and OPS complex thermal isolation structure and excellent performance has been achieved.
引用
收藏
页码：354 / 356
页数：3
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