Formation of defects in the oxide layer of ion-irradiated Si/SiO2 structures

被引：4
|
作者：
Baraban, AP [1 ]
Miloglyadova, LV [1 ]
机构：
[1] St Petersburg State Univ, Inst Phys Res, St Petersburg 198904, Russia
来源：
TECHNICAL PHYSICS | 2002年 / 47卷 / 05期
关键词：
D O I：
10.1134/1.1479984
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electroluminescence and high-frequency voltage-capacitance methods are used to study Si/SiO2 structures obtained by thermal oxidation of KEF-5 (100)Si wafers at 950degreesC in wet oxygen (oxide thickness 250 nm). The structures are irradiated by 130-keV argon ions with doses in the range of 10(13)-3.2 x 10(17) cm(-2). A correlation between the origin, properties, and formation mechanism of implantation-induced defects in the oxide layer is established, and a model of defect formation is proposed. (C) 2002 MAIK "Nauka/Interperiodica".
引用
收藏
页码：569 / 573
页数：5
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