A 14-μA 3-ppm/°C CMOS bandgap voltage reference

被引：0
|
作者：
Yao, CH [1 ]
Liu, BA [1 ]
Xia, YW [1 ]
机构：
[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源：
2005 6TH INTERNATIONAL CONFERENCE ON ASIC PROCEEDINGS, BOOKS 1 AND 2 | 2005年
关键词：
CMOS bandgap reference; curvature compensation; temperature-dependent resistor ration; PSRR; frequency compensation;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The work presented in this paper improves on a high order curvature-compensated CMOS band-gap reference circuit design [6]. A cascoded current mirror is utilized in order to increase the bandgap voltage's power supply rejection ration (PSRR) and decrease the mismatch current A source follower is inserted in series with the capacitor to guarantee the system stable. Simulated in the standard 0.18 mu m CMOS technology, the proposed voltage reference can operate down to 1.5V supply and consumes supply current of 14 mu A. A temperature coefficient of 3-ppm/degrees C is achieved through the temperature-dependent resistor ratio.
引用
收藏
页码：524 / 527
页数：4
相关论文
共 50 条
  • [31] A Novel Low Voltage Subtracting BandGap Reference with Temperature Coefficient of 2.2 ppm/°C
    Zhu, Wen-rui
    Yang, Hai-gang
    Gao, Tong-qiang
    2011 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2011, : 2281 - 2284
  • [32] An 1.4 ppm/°C Bandgap Voltage Reference with Automatic Curvature-Compensation Technique
    Zhou, Zekun
    Yu, Hongming
    Shi, Yue
    Zhang, Bo
    2017 INTERNATIONAL CONFERENCE ON ROBOTICS AND MACHINE VISION, 2017, 10613
  • [33] A Sub-1-ppm/°C Curvature-Compensated Bandgap Voltage Reference
    Wan, Meilin
    Gu, Haoshuang
    Zhang, Zhenzhen
    PROCEEDINGS OF 2016 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM), 2016, : 81 - 85
  • [34] A self-calibrated bandgap voltage reference with 0.5 ppm/°C temperature coefficient
    Jin, Le
    Xing, Hanqing
    Chen, Degang
    Geiger, Randall
    2006 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11, PROCEEDINGS, 2006, : 2853 - +
  • [35] A 12.8 nA and 7.2 ppm/°C CMOS voltage reference without amplifier
    Zeng, Yanhan
    Huang, Sifan
    Zhang, Xin
    Tan, Hong-zhou
    IEICE ELECTRONICS EXPRESS, 2018, 15 (03):
  • [36] LOW-VOLTAGE CMOS BANDGAP REFERENCE
    VITTOZ, EA
    NEYROUD, O
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (03) : 573 - 577
  • [37] A low voltage CMOS bandgap reference circuit
    Wadhwa, Sanjay K.
    PROCEEDINGS OF 2008 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-10, 2008, : 2693 - 2696
  • [38] BANDGAP VOLTAGE REFERENCE SOURCES IN CMOS TECHNOLOGY
    YE, R
    TSIVIDIS, Y
    ELECTRONICS LETTERS, 1982, 18 (01) : 24 - 25
  • [39] An Improved CMOS Voltage Bandgap Reference Circuit
    Saidulu, Bellamkonda
    Manoharan, Arun
    Bhavani, Bellamkonda
    Sk, Jameer Basha
    ARTIFICIAL INTELLIGENCE AND EVOLUTIONARY COMPUTATIONS IN ENGINEERING SYSTEMS, ICAIECES 2017, 2018, 668 : 621 - 629
  • [40] A Novel Wide-Temperature-Range, 3.9 ppm/°C CMOS Bandgap Reference Circuit
    Andreou, Charalambos M.
    Koudounas, Savvas
    Georgiou, Julius
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2012, 47 (02) : 574 - 581
12345