MOCVD of ferroelectric thin films

被引：0
|
作者：
Schmidt, C
Lehnert, W
Leistner, T
Frey, L
Ryssel, H
机构：
[1] Fraunhofer Inst Integrierte Schaltungen, D-91058 Erlangen, Germany
[2] Univ Erlangen Nurnberg, Lehrstuhl Elekt Bauelemente, D-91058 Erlangen, Germany
来源：
JOURNAL DE PHYSIQUE IV | 1999年 / 9卷 / P8期
关键词：
D O I：
10.1051/jp4:1999872
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Ferroelectric thin films of lead titanate (PbTiO3) and lead zirconate titanate (PZT) were grown in a cold-wall low-pressure chemical vapor deposition reactor on silicon substrates with diameters up to 150mm using liquid metal organic precursors including a novel zirconium precursor. Film thickness ranged from 10nm to 700nm. The films were characterized regarding their electrical, optical, and structural properties depending on film composition and deposition conditions. In this paper, we report our results regarding composition effects, the electrical polarization behavior and optical properties like refractive indices and absorption coefficient, which were investigated by spectroscopic ellipsometry for a wide wavelength range. Furthermore some temperature dependent effects of the platinum electrodes are described.
引用
收藏
页码：575 / 582
页数：8
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