Key features of the design methodology enabling a multi-core SoC implementation of a first-generation CELL processor

被引:5
|
作者
Pham, Dac [1 ]
Anderson, Hans-Werner [1 ]
Behnen, Erwin [1 ]
Bolliger, Mark [1 ]
Gupta, Sanjay [1 ]
Hofstee, Peter [1 ]
Harvey, Paul [1 ]
Johns, Charles [1 ]
Kahle, Jim [1 ]
Kameyama, Atsushi [2 ]
Keaty, John [1 ]
Le, Bob [1 ]
Lee, Sang [1 ]
Nguyen, Tuyen [1 ]
Petrovick, John [1 ]
Pham, Mydung [1 ]
Pille, Juergen [1 ]
Posluszny, Stephen [1 ]
Riley, Mack [1 ]
Verock, Joseph [1 ]
Warnock, James [1 ]
Weitzel, Steve [1 ]
Wendel, Dieter [1 ]
机构
[1] IBM Syst & Technol Grp, Austin, TX USA
[2] Toshiba Amer Elect Components, Austin, TX USA
关键词
CELL Processor; multi-core; SOC; SOI; modularity; re-use; 64-bit Power Architecture; multi-threading; synergistic processor; flexible IO; Linux; multi-operating system; virtualization technology; real-time system; hardware content protection; correct-by-construction; thermal management; power management; clock distribution; high-performance latch; local clock buffer; design hierarchy; design environment; design dependency solution; linear sensor; digital thermal sensor;
D O I
10.1109/ASPDAC.2006.1594796
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper reviews the design challenges that current and future processors must face, with stringent power limits and high frequency targets, and the design methods required to overcome the above challenges and address the continuing Giga-scale system integration trend. This paper then describes the details behind the design methodology that was used to successfully implement a first-generation CELL processor - a multi-core SoC. Key features of this methodology are broad optimization with fast rule-based analysis engines using macrolevel abstraction for constraints propagation up/down the design hierarchy, coupled with accurate transistor level simulation for detailed analysis. The methodology fostered the modular design concept that is inherent to the CELL architecture, enabling a high frequency design by maximizing custom circuit content through re-use, and balanced power, frequency, and die size targets through global convergence capabilities. The design has roughly 241 million transistors implemented in 90 nm SOI technology with 8 levels of copper interconnects and one local interconnect layer. The chip has been tested at various temperatures, voltages, and frequencies. Correct operation has been observed in the lab on first pass silicon at frequencies well over 4GHz.
引用
收藏
页码:871 / 878
页数:8
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