Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors

被引：3

作者：

Chen, Tzu-Pin ^{[1
]}

Lee, Chi-Jhung ^{[1
]}

Cheng, Shiou-Ying ^{[2
]}

Lour, Wen-Shiung ^{[3
]}

Tsai, Jung-Hui ^{[4
]}

Guo, Der-Feng ^{[5
]}

Ku, Ghun-Wei ^{[1
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Nation Ilan Univ, Dept Elect Engn, Ilan 26041, Taiwan

[3] Natl Taiwan Ocean Univ, Dept Elect Engn, Chilung 20224, Taiwan

[4] Natl Kaohsiung Normal Technol, Dept Elect Engn, Yanchao Township 82444, Kaohsiung Cty, Taiwan

[5] Chinese AF Acad, Dept Elect Engn, Kangsun, Kaohsiung Cty, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 02期

关键词：

gallium arsenide; gallium compounds; heterojunction bipolar transistors; III-V semiconductors; indium compounds; semiconductor device reliability; thermal stability; PASSIVATION; SURFACE; BASE; HBTS;

D O I：

10.1149/1.3042272

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The temperature-dependent characteristics of InGaP/GaAs heterojunction bipolar transistors with different emitter ledge thickness (t) are studied and demonstrated. From experimental results, devices d(3) (t=100 A) and d(4) (t=200 A) show the highest current gains, lowest base current, and base current ideality factors. Devices d(3) and d(4) also exhibit an improved thermal stability on dc current-voltage characteristics. Moreover, device d(4) shows the best reliability performance after a 200 h stress test. Therefore, the data support that the optimum emitter ledge thickness is between 100 and 200 A.

引用

页码：H41 / H43

页数：3

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