Atomic Hole Doping of Graphene

被引：376
|
作者：
Gierz, Isabella [1 ]
Riedl, Christian [1 ]
Starke, Ulrich [1 ]
Ast, Christian R. [1 ]
Kern, Klaus [1 ,2 ]
机构：
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] Ecole Polytech Fed Lausanne, Inst Phys Nanostruct, CH-1015 Lausanne, Switzerland
来源：
NANO LETTERS | 2008年 / 8卷 / 12期
关键词：
D O I：
10.1021/nl802996s
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The application of graphene in nanoscale electronic devices requires the deliberate control of the density and character of its charge carriers. We show by angle-resolved photoemission spectroscopy that substantial hole doping in the conical band structure of epitaxial graphene monolayers can be achieved by the adsorption of bismuth, antimony, or gold. In the case of gold doping the Dirac point is shifted into the unoccupied states. Atomic doping presents excellent perspectives for large scale production.
引用
收藏
页码：4603 / 4607
页数：5
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