Ion sensing improvements of hafnium oxide by nitrogen incorporation

被引:0
|
作者
Lai, CS [1 ]
Yang, CM [1 ]
Lue, TF [1 ]
Lue, CE [1 ]
Wang, CY [1 ]
Ko, HP [1 ]
Wang, TM [1 ]
机构
[1] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan
来源
2004 IEEE International Conference on Semiconductor Electronics, Proceedings | 2004年
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This is the first time that hafnium oxynitride (HfOxNy) have been applied to hydrogen ion sensing technology. HfOxNy and HfO2 were prepared in different ratio Ar/N-2/O-2 gas mixture by sputter with Hafnium target. The sensitivity for all samples could be improved for at least 3.3mV/pH by 12 hours R.O. water immersion. The optimized condition for HfOxNy-EIS was sputtering in the ambient of N-2 ratio 10% and achieved highest sensitivity (56.64mV/pH) and lowest drift (1.42mV/hr) and hysteresis (1.7mV). This material and process could also improve membrane thermal stability and integrate easily with standard CMOS process.
引用
收藏
页码:569 / 572
页数:4
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