Ion sensing improvements of hafnium oxide by nitrogen incorporation

被引：0

作者：

Lai, CS ^{[1
]}

Yang, CM ^{[1
]}

Lue, TF ^{[1
]}

Lue, CE ^{[1
]}

Wang, CY ^{[1
]}

Ko, HP ^{[1
]}

Wang, TM ^{[1
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan

来源：

2004 IEEE International Conference on Semiconductor Electronics, Proceedings | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This is the first time that hafnium oxynitride (HfOxNy) have been applied to hydrogen ion sensing technology. HfOxNy and HfO2 were prepared in different ratio Ar/N-2/O-2 gas mixture by sputter with Hafnium target. The sensitivity for all samples could be improved for at least 3.3mV/pH by 12 hours R.O. water immersion. The optimized condition for HfOxNy-EIS was sputtering in the ambient of N-2 ratio 10% and achieved highest sensitivity (56.64mV/pH) and lowest drift (1.42mV/hr) and hysteresis (1.7mV). This material and process could also improve membrane thermal stability and integrate easily with standard CMOS process.

引用

页码：569 / 572

页数：4

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