Novel BaTiO3-Based, Ag/Pd-Compatible Lead-Free Relaxors with Superior Energy Storage Performance

被引:153
|
作者
Yang, Huijing [1 ,2 ]
Lu, Zhilun [1 ,3 ]
Li, Linhao [1 ]
Bao, Weichao [4 ]
Ji, Hongfen [1 ,5 ]
Li, Jinglei [6 ,7 ]
Feteira, Antonio [8 ]
Xu, Fangfang [4 ]
Zhang, Yong [9 ]
Sun, Huajun [9 ]
Huang, Zhichao [8 ,10 ]
Lou, Weichao [8 ,10 ]
Song, Kaixin [10 ]
Sun, Shikuan [1 ]
Wang, Ge [1 ]
Wang, Dawei [1 ]
Reaney, Ian M. [1 ]
机构
[1] Univ Sheffield, Dept Mat Sci & Engn, Sheffield S1 3JD, S Yorkshire, England
[2] Tangshan Normal Univ, Dept Phys, Tangshan 063000, Peoples R China
[3] Henry Royce Inst, Sheffield S1 3JD, S Yorkshire, England
[4] Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
[5] Xian Technol Univ, Lab Thin Film Tech & Opt Test, Xian 710032, Peoples R China
[6] Xi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab, Minist Educ, Xian 710049, Peoples R China
[7] Xi An Jiao Tong Univ, Int Ctr Dielect Res, Xian 710049, Peoples R China
[8] Sheffield Hallam Univ, Mat & Engn Res Inst, Sheffield S1 1WB, S Yorkshire, England
[9] Wuhan Univ Technol, State Key Lab Silicate Mat Architectures, Sch Mat Sci & Engn, Wuhan 430070, Peoples R China
[10] Hangzhou Dianzi Univ, Coll Elect Informat, Hangzhou 310018, Peoples R China
基金
英国工程与自然科学研究理事会; 中国国家自然科学基金;
关键词
energy storage; capacitors; lead-free; BaTiO3; dielectric; ceramics; MULTILAYER CERAMIC CAPACITORS; ALUMINUM-ION BATTERY; BATIO3-BI(MG2/3NB1/3)O-3 CERAMICS; FERROELECTRIC CERAMICS; SINTERING TEMPERATURE; BARIUM-TITANATE; DENSITY; EFFICIENCY;
D O I
10.1021/acsami.0c13057
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Ceramic dielectrics are reported with superior energy storage performance for applications, such as power electronics in electrical vehicles. A recoverable energy density (W-rec) of similar to 4.55 J cm(-3) with eta similar to 90% is achieved in lead-free relaxor BaTiO3-0.06B(i2/3)(Mg1/3Nb2/3)O-3 ceramics at similar to 520 kV cm(-1). These ceramics may be co-fired with Ag/Pd, which constitutes a major step forward toward their potential use in the fabrication of commercial multilayer ceramic capacitors. Compared to stoichiometric Bi(Mg2/3Nb1/3)O-3-doped BaTiO3 (BT), A-site deficient Bi-2/3(Mg1/3Nb2/3)O-3 reduces the electrical heterogeneity of BT. Bulk conductivity differs from the grain boundary only by 1 order of magnitude which, coupled with a smaller volume fraction of conducting cores due to enhanced diffusion of the dopant via A-site vacancies in the A-site sublattice, results in higher breakdown strength under an electric field. This strategy can be employed to develop new dielectrics with improved energy storage performance.
引用
收藏
页码:43942 / 43949
页数:8
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