Growth and characterization of diamond films on TiN/Si(100) by microwave plasma chemical vapor deposition

被引：2
|
作者：
Chen, Wei-Chun [1 ]
Wang, Wei-Lin [1 ]
Tiwari, Rajanish N. [1 ]
Chang, Li [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
来源：
DIAMOND AND RELATED MATERIALS | 2009年 / 18卷 / 2-3期
关键词：
Diamond film; Nitrides; Chemical vapor deposition; Interface characterization; Morphology; NANOCRYSTALLINE DIAMOND; CVD DIAMOND; NUCLEATION; SURFACES; SILICON;
D O I：
10.1016/j.diamond.2008.10.018
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Polycrystalline diamond films were deposited on silicon (100) substrate by microwave plasma chemical vapor disposition (MPCVD) using similar to 300 nm thick < 001 > textured titanium nitride (TiN) films as buffer layer which were prepared by radio-frequency reactive sputtering. The diamond/TiN films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. The results show that no apparent change can be observed for the < 100 > oriented TiN buffer layers after MPCVD even with a negative bias voltage applied onto the substrates. (C) 2008 Published by Elsevier B.V.
引用
收藏
页码：124 / 127
页数：4
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