Optical properties of Ge1-zSnz/SixGe1-x-ySny heterostructures

被引:0
|
作者
Lin, Hai [1 ]
Chen, Robert [2 ]
Lu, Weisheng [3 ]
Huo, Yijie [2 ]
Kamins, Theodore I. [2 ]
Harris, James S. [2 ]
机构
[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[3] Univ Strathclyde, Inst Photon, Glasgow G4 0NW, Lanark, Scotland
关键词
LASERS;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:919 / +
页数:2
相关论文
共 50 条
  • [21] Properties of 620 nm Semiconductor Lasers with Ge/SixGe1-x Substrate
    Lin Tao
    Xie Jianan
    Mu Yan
    Li Yaning
    Sun Wanjun
    Zhang Xiaxia
    Yang Sha
    Mi Shuai
    LASER & OPTOELECTRONICS PROGRESS, 2022, 59 (19)
  • [22] Electron Transport and Strain Mapping in Ge-SixGe1-x Core-Shell Nanowire Heterostructures
    Dillen, D. C.
    Nah, J.
    Varahramyan, K. M.
    Banerjee, S. K.
    Tutuc, E.
    SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, 2012, 50 (09): : 681 - 689
  • [23] DEFECT-FORMING IN SIXGE1-X/GE(111) HETEROSTRUCTURES PREPARED BY THE HYDRIDE EPITAXY TECHNIQUE
    VDOVIN, VI
    KUZNETSOV, OA
    MILVIDSKII, MG
    ORLOV, LK
    YUGOVA, TG
    KRISTALLOGRAFIYA, 1993, 38 (04): : 269 - 271
  • [24] Temperature dependence of the Raman spectrum in Ge1-ySny and Ge1-x-ySixSny alloys
    Bagchi, Sampriti
    Poweleit, Christian D.
    Beeler, Richard T.
    Kouvetakis, John
    Menendez, Jose
    PHYSICAL REVIEW B, 2011, 84 (19)
  • [25] DISLOCATION CONFIGURATIONS IN SI/SIXGE1-X STRAINED LAYER HETEROSTRUCTURES
    RAJAN, K
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (10) : 1009 - 1013
  • [26] Raman shifts in MBE-grown SixGe1-x - ySny alloys with large Si content
    Schlipf, Jon
    Tetzner, Henriette
    Spirito, Davide
    Manganelli, Costanza L.
    Capellini, Giovanni
    Huang, Michael R. S.
    Koch, Christoph T.
    Clausen, Caterina J.
    Elsayed, Ahmed
    Oehme, Michael
    Chiussi, Stefano
    Schulze, Joerg
    Fischer, Inga A.
    JOURNAL OF RAMAN SPECTROSCOPY, 2021, 52 (06) : 1167 - 1175
  • [27] Ge1-ySny (y=0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties
    Senaratne, C. L.
    Gallagher, J. D.
    Jiang, Liying
    Aoki, Toshihiro
    Smith, D. J.
    Menendez, J.
    Kouvetakis, J.
    JOURNAL OF APPLIED PHYSICS, 2014, 116 (13)
  • [28] OPTICAL-SPECTRA OF SIXGE1-X ALLOYS
    HUMLICEK, J
    GARRIGA, M
    ALONSO, MI
    CARDONA, M
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (07) : 2827 - 2832
  • [29] Shell morphology and Raman spectra of epitaxial Ge-SixGe1-x and Si-SixGe1-x core-shell nanowires
    Wen, Feng
    Dillen, David C.
    Kim, Kyounghwan
    Tutuc, Emanuel
    JOURNAL OF APPLIED PHYSICS, 2017, 121 (23)
  • [30] Optical properties of SixGe1-x single crystals grown by liquid phase diffusion
    Derin, Hueseyin
    Kantarli, Kayhan
    Yildiz, Mehmet
    Dost, Sadik
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2009, 12 (4-5) : 146 - 150