Carrier-carrier scattering in GaAs/AlxGa1-xAs quantum wells

被引：2

作者：

Sun, KW ^{[1
]}

Song, TS

Sun, CK

Wang, JC

Kane, MG

Wang, SY

Lee, CP

机构：

[1] Feng Chia Univ, Dept Elect Engn, Taichung 40724, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

[3] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 10764, Taiwan

[4] Sarnoff Corp, Princeton, NJ 08543 USA

[5] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[6] Natl Chiao Tung Univ, Inst Elect, Hsinchu, Taiwan

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.61.15592

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied carrier dynamics in highly nonequilibrium two-dimensional (2D) carrier distributions generated with femtosecond laser pulses in p-doped GaAs/Al0.32Ga0.68As quantum wells at photoexcited carrier densities between 10(9) and 10(11) cm(-2). The initially nonthermal carrier distribution is quickly broadened due to inelastic carrier-carrier scattering, with the broadening rate increasing as carrier density is increased. Measurements of the unrelaxed peak height in the hot electron-neutral acceptor luminescence spectra are compared with calculations of the carrier distribution using integration of the 2D dynamically screened Boltzmann equation. Our results indicate that carrier-carrier scattering becomes as significant a scattering mechanism as LO-phonon emission at density of about 10(10) cm(-2).

引用

页码：15592 / 15595

页数：4

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