The design of SiGe HBT direct-coupled LNA

被引：0
|
作者：
Yang Weiming [1 ]
Chen Jianxin [1 ]
Xie Wanbo [1 ]
Shi Chen [1 ]
机构：
[1] Beijing Univ Technol, Beijing Optoelect Technol Lab, Beijing 100022, Peoples R China
来源：
2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5 | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A direct-coupled low noise amplifier was designed and fabricated on a Teflon substrate, using packaged SiGe HBTs BFP420 and chip type passive components. This SiGe LNA has the advantages such as the wide bandwidth (15GHz), the low noise figure (NF <= 2.23dB), the high power gain (S21 >= 26.7dB), the input and output VSWR are all less than 2. The design principle and technology features of the broadband amplifier was described. The computer simulated results were coincident with that of the test.
引用
收藏
页码：1123 / 1126
页数：4
相关论文
共 50 条
  • [1] Cascadable direct-coupled wideband SiGe HBT MMIC
    Huang, WT
    Xiong, XY
    Li, GQ
    Zhang, W
    Li, XY
    Liu, ZH
    Qian, PX
    2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 2140 - 2143
  • [2] The design of SiGe HBT LNA for IMT-2000 mobile application
    Lee, J
    Lee, G
    Niu, G
    Cressler, JD
    Kim, JH
    Lee, JC
    Lee, B
    Kim, NY
    2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2002, : 1261 - 1264
  • [3] Design of Dual Band SiGe HBT LNA with Current Reuse Topology
    Lu, Z. Y.
    Xie, H. Y.
    Zhang, W. R.
    Huo, W. J.
    Guo, Z. J.
    Xing, G. H.
    Ding, C. B.
    Chen, L.
    Zhang, Y. J.
    2011 INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2011,
  • [4] Noise optimization of a GaAs HBT direct-coupled low noise amplifier
    Kobayashi, KW
    Tran, LT
    Oki, AK
    Streit, DC
    1996 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 1996, : 815 - 818
  • [5] A SiGe HBT D-Band LNA Utilizing Asymmetric Broadside Coupled Lines
    Moradinia, Arya
    Rao, Sunil G.
    Cressler, John D.
    IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS, 2023, 33 (06): : 707 - 710
  • [6] Hardware circuit design for direct-coupled SVG
    Dai, Xianbin
    Yin, Jian
    Du, Wei
    APPLIED MATERIALS AND TECHNOLOGIES FOR MODERN MANUFACTURING, PTS 1-4, 2013, 423-426 : 2629 - 2634
  • [7] DESIGN CONSIDERATIONS FOR DIRECT-COUPLED TRANSISTOR AMPLIFIERS
    LINDSAY, JE
    WOLL, HJ
    RCA REVIEW, 1958, 19 (03): : 433 - 454
  • [8] A monolithic HEMT-HBT direct-coupled amplifier with active input matching
    Kobayashi, KW
    Streit, DC
    Umemoto, DK
    Block, TR
    Oki, AK
    IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1996, 6 (01): : 55 - 57
  • [9] A high linearity SiGe HBT LNA for GPS receiver
    罗彦彬
    石坚
    马成炎
    甘业兵
    钱敏
    Journal of Semiconductors, 2014, 35 (04) : 96 - 101
  • [10] A high linearity SiGe HBT LNA for GPS receiver
    Luo Yanbin
    Shi Jian
    Ma Chengyan
    Gan Yebing
    Qian Min
    JOURNAL OF SEMICONDUCTORS, 2014, 35 (04)
12345