Progress of Research on Preparation of Micro Gas Sensors of Metal Oxide Semiconductors

被引:4
|
作者
An, Wen [1 ]
Yang, Chunying [1 ]
机构
[1] Naval Aeronaut & Astronaut Univ, Yantai, Peoples R China
来源
ELECTRICAL INFORMATION AND MECHATRONICS AND APPLICATIONS, PTS 1 AND 2 | 2012年 / 143-144卷
关键词
metal oxide semiconductors; gas sensor; preparation; selectivity; stability; SENSING PROPERTIES; FILMS;
D O I
10.4028/www.scientific.net/AMM.143-144.562
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
New progress of research on the preparation technique of micro gas sensors of metal oxide semiconductors is introduced, such as the chemical treatment of the gas sensing film, the deposited technique of gas sensing film in the oxygen radical assisted EB evaporation, the technique of the multilayered film, the fabrication technique of the thermally oxidized, the technique of the electrode configuration, the fabrication technique of the miniaturized arrays by micro-molding in capillaries, the dip-coating of the sol-gel. And their features will be analyzed respectively, and their existing problems and future development directions will be given.
引用
收藏
页码:562 / 566
页数:5
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