Kinetic Monte Carlo Simulation for Switching Probability of ReRAM

被引：0

作者：

Shirasawa, Masataka ^{[1
]}

Dlamini, Mlandeli Ernest ^{[1
]}

Kamakura, Yoshinari ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Div Elect Elect & Informat Engn, Osaka, Japan

来源：

2016 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) | 2016年

关键词：

ReRAM; Monte Carlo simulation; switching probability;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Kinetic Monte Carlo simulations are performed to investigate the switching characteristics of resistive random access memory. The simulation results reveal that the switching probability distribution against the voltage pulse width is well fitted by the lognormal curve, which would originate from the drift-diffusion mechanism for the ion transport in the insulating film.

引用

页码：32 / 32

页数：1

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