Highly Stackable 3D Ferroelectric NAND Devices : Beyond the Charge Trap Based Memory

被引：12
|
作者：
Yoon, Sunghyun [1 ]
Hong, Sung-In [1 ]
Choi, Garam [1 ]
Kim, Daehyun [1 ]
Kim, Ildo [2 ]
Jeon, Seok Min [2 ]
Kim, Changhan [3 ]
Min, Kyunghoon [1 ]
机构：
[1] SK Hynix Inc, Revolutionary Technol Ctr RTC, Icheon, South Korea
[2] SK Hynix Inc, Res & Dev Proc, Icheon, South Korea
[3] SK Hynix Inc, Avengers TF, Icheon, South Korea
来源：
2022 14TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW 2022) | 2022年
关键词：
3D NAND; Ferroelectric; scalable;
D O I：
10.1109/IMW52921.2022.9779278
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this study, we demonstrate for the first time the multi-level capable 3D ferroelectricNAND (Fe-NAND) device using the 3D NAND test vehicle for mass production. The present 3D ferroelectric NAND shows the potential multi-level cell operation with the 3.4 V program/erase window. We also reported cycling and retention characteristics.
引用
收藏
页码：140 / 143
页数：4
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