Three dimensional modelling of grain boundary interaction and evolution during directional solidification of multi-crystalline silicon

被引：4
|
作者：
Jain, T. [1 ]
Lin, H. K. [1 ]
Lan, C. W. [1 ]
机构：
[1] Natl Taiwan Univ, Dept Chem Engn, Taipei 10617, Taiwan
来源：
JOURNAL OF CRYSTAL GROWTH | 2018年 / 485卷
关键词：
Grain boundary; CSL; Grain boundary interaction; Phase field model; TILT; GROWTH; ORIENTATION; VECTOR; ENERGY;
D O I：
10.1016/j.jcrysgro.2017.12.044
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The development of grain structures during directional solidification of multi-crystalline silicon (mc-Si) plays a crucial role in the materials quality for silicon solar cells. Three dimensional (3D) modelling of the grain boundary (GB) interaction and evolution based on phase fields by considering anisotropic GB energy and mobility for me-Si is carried out for the first time to elucidate the process. The energy and mobility of GBs are allowed to depend on misorientation and the GB plane. To examine the correctness of our method, the known the coincident site lattice (CSL) combinations such as (Sigma a+Sigma b -> Sigma ax b) or (Sigma a+Sigma b -> Sigma a/b) are verified. We frther discuss how to use the GB normal to characterize a Sigma 3 twin GB into a tilt or a twist one, and show the interaction between tilt and twist Sigma 3 twin GBs. Two experimental scenarios are considered for comparison and the results are in good agreement with the experiments as well as the theoretical predictions. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码：8 / 18
页数：11
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