Effect of Si diffusion on growth, parameters and photoluminescence of GeSi/Si(001) self-assembled islands

被引：0
|
作者：
Valakh, MY [1 ]
Vostokov, NV
Gusev, SA
Drozdov, YN
Krasil'nik, ZF
Lobanov, DN
Moldavskaya, LD
Novikov, AV
Postnikov, VV
Stepikhova, MV
Usami, N
Shiraki, Y
Yukhymchuk, VA
机构：
[1] Russian Acad Sci, Inst Microstruct Phys, Nizhnii Novgorod, Russia
[2] Univ Tokyo, Tokyo, Japan
[3] Natl Acad Sci Ukraine, Inst Semicond Phys, Kiev, Ukraine
来源：
IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA | 2002年 / 66卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：161 / 164
页数：4
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